In single-cell Li-ion protection boards, the M3966M acts as a discharge MOSFET. Verification ensures low ( R_DS(on) ) to prevent excessive voltage drop under 2A-3A loads.
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M3966M MOSFET verified, M3966M datasheet, M3966M equivalent, test M3966M, N-channel 60V MOSFET, DPAK MOSFET verification, counterfeit MOSFET detection. In single-cell Li-ion protection boards, the M3966M acts
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |-----------|--------|----------------|-----|-----|-----|------| | Drain-Source Voltage | ( V_DSS ) | ( V_GS=0V ), ( I_D=250\mu A ) | 20 | - | 30 | V | | Gate-Source Voltage | ( V_GSS ) | ±12V | - | - | ±12 | V | | Drain Current (Continuous) | ( I_D ) | ( T_A=25^\circ C ) | - | 3.0 | - | A | | Drain Current (Pulsed) | ( I_DM ) | ( t_p \leq 10\mu s ) | - | 10 | - | A | | Gate Threshold Voltage | ( V_GS(th) ) | ( V_DS=V_GS, I_D=250\mu A ) | 0.6 | 1.0 | 1.4 | V | | Static Drain-Source On-Resistance | ( R_DS(on) ) | ( V_GS=4.5V, I_D=2.5A ) | - | 45 | 60 | mΩ | | Input Capacitance | ( C_iss ) | ( V_DS=15V, f=1MHz ) | - | 300 | 400 | pF | | Turn-On Delay Time | ( t_d(on) ) | ( V_DD=15V, R_G=6\Omega ) | - | 8 | 15 | ns | Share your findings with the engineering community
The M3966M is a robust, low-resistance solution for modern power electronics. It bridges the gap between high-power handling and logic-level control, making it an essential component in compact, high-efficiency power stages. Its verified status ensures reliability for critical applications where thermal and electrical consistency is non-negotiable.
Utilized in PWM-based lighting control for its fast switching response. Equivalent and Replacement Parts